Strain-Induced Spectral Red-Shifting from Nanoscale Frustum Arrays Fabricated over InGaN/GaN Quantum Wells for Light-Emitting Applications
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam Road, Hong Kong, China
Funder
Research Grants Council, University Grants Committee
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsanm.0c02939
Reference35 articles.
1. Energy Savings Forecast of Solid-State Lighting in General Illumination Applications
2. White-Light-Emitting Diodes with Quantum Dot Color Converters for Display Backlights
3. Quantum Dot Light-Emitting Devices with Electroluminescence Tunable over the Entire Visible Spectrum
4. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations
5. InGaN: An overview of the growth kinetics, physical properties and emission mechanisms
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