Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference29 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
2. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
3. Exciton localization in InGaN quantum well devices
4. Investigation of fast and slow decays in InGaN/GaN quantum wells
5. Largely variable electroluminescence efficiency with current and temperature in a blue (In, Ga)N multiple-quantum-well diode
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