Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability-Reference-Cited by-同舟云学术

Time-resolved photoluminescence from n-doped GaN/Al0.18Ga0.82N short-period superlattices probes carrier kinetics and long-term structural stability

Published:2019-05-14 Issue:18 Volume:125 Page:185705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mahler Felix¹^ORCID,Tomm Jens W.¹^ORCID,Reimann Klaus¹^ORCID,Woerner Michael¹,Hoffmann Veit²,Netzel Carsten²,Weyers Markus²^ORCID,Elsaesser Thomas¹^ORCID

Affiliation:

1. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany

2. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5078668

Reference24 articles.

1. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2. Luminescence properties of defects in GaN

3. Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and anIn0.07Ga0.93N/In0.12Ga0.88Nmultiple quantum well

4. Ultrafast carrier dynamics in a GaN/Al0.18Ga0.82N superlattice

5. Nitride Semiconductor Devices

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