Ultrafast carrier relaxation in GaN,In0.05Ga0.95N,and anIn0.07Ga0.93N/In0.12Ga0.88Nmultiple quantum well
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.67.155308/fulltext
Reference37 articles.
1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
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3. Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
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