In-situ spectroscopic analysis of the recombination kinetics in UVB LEDs during their operation
Author:
Affiliation:
1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
2. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany
Funder
Deutsche Forschungsgemeinschaft
Bundesministerium für Bildung und Forschung
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0018751
Reference25 articles.
1. Analysis of the physical processes responsible for the degradation of deep-ultraviolet light emitting diodes
2. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature
3. M. Meneghini , N. Trivellin , L. Trevisanello , A. Lunev , J. Yang , Y. Bilenko , W. Sun , M. Shatalov , R. Gaska , E. Zanoni , and G. Meneghesso , in IEEE CFP08RPS-CDR 46th Annual International Reliability Physics Symposium, Phoenix, AZ (2008), p. 441.
4. Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire
5. Defect-Related Degradation of AlGaN-Based UV-B LEDs
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