Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature-Reference-Cited by-同舟云学术

Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

Published:2015-09-07 Issue:9 Volume:118 Page:094504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Glaab Johannes¹,Ploch Christian¹,Kelz Rico¹,Stölmacker Christoph¹,Lapeyrade Mickael¹,Ploch Neysha Lobo¹,Rass Jens¹,Kolbe Tim¹,Einfeldt Sven¹,Mehnke Frank²,Kuhn Christian²,Wernicke Tim²,Weyers Markus¹,Kneissl Michael¹²

Affiliation:

1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany

2. Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4929656

Reference24 articles.

1. Curing of composite components by ultraviolet radiation: A review

2. Mechanisms of Ultraviolet (UV) B and UVA Phototherapy

3. UV-B Induced Secondary Plant Metabolites

4. Optical power degradation mechanisms in AlGaN-based 280nm deep ultraviolet light-emitting diodes on sapphire

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