Surface potential measurements on GaN and AlGaN/GaN heterostructures by scanning Kelvin probe microscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1371941
Reference28 articles.
1. Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
4. Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
5. Polarization-induced electron populations
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