Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence

Author:

Netzel C.ORCID,Hoffmann V.,Einfeldt S.,Weyers M.

Funder

Deutsche Forschungsgemeinschaft

European Fund for Regional Development of the European Union

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. S. Masui, Y. Nakatsu, D. Kasahara, and S. Nagahama, Proceedings of SPIE OPTO (2017), p. 101041H-7.

2. D. Feezell and S. Nakamura, C. R. Phys. 19, 113 (2018).

3. D. Feezell and S. Nakamura, Semiconductor Lasers Fundamentals and Applications, ed. A. Baranov and E. Tournié (Cambridge: Woodhead Publishing Limited, 2013), p. Chapter 6.

4. A. Uedono, S. Ishibashi, T. Ohdaira, and R. Suzuki, J. Cryst. Growth 311, 3075 (2009).

5. M.A. Reshchikov, Semiconductors and Semimetals 91: Defects Semiconductors, ed. L. Romano, V. Provitera, and C. Jagadish (Burlington: Academic Press, 2015), pp. 315–367.

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