Temperature‐Dependent Charge Carrier Diffusion in [0001¯] Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
Author:
Affiliation:
1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik Gustav-Kirchhoff-Straße 4 12489 Berlin Germany
2. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie Max-Born-Straße 2A 12489 Berlin Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202000016
Reference31 articles.
1. Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance
2. Time-resolved experimental study of carrier lifetime in GaN epilayers
3. Determination of carrier diffusion length in GaN
4. Low temperature diffusion length of excitons in gallium nitride measured by cathodoluminescence technique
5. Effect of lightly Si doping on the minority carrier diffusion length in n-type GaN films
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