Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures-Reference-Cited by-同舟云学术

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Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures

Published:2011-02-07 Issue:6 Volume:98 Page:063507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shen Xiao,Zhang En Xia,Zhang Cher Xuan,Fleetwood Daniel M.,Schrimpf Ronald D.,Dhar Sarit,Ryu Sei-Hyung,Pantelides Sokrates T.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3554428

Reference25 articles.

1. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide

2. Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

3. Physical mechanisms of negative-bias temperature instability

4. Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs

5. Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

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1. Special Degradation Effects of ⁶⁰Co γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs;IEEE Transactions on Nuclear Science;2023-09

2. Synergistic Effect of Negative Bias Instability and Total Ionizing Dose on SiC MOSFETs;IEEE Transactions on Nuclear Science;2023-08

3. Impact of post-nitridation annealing in CO₂ ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors;Applied Physics Express;2022-05-24

4. High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors;Journal of Applied Physics;2021-12-14

5. SiC/SiO2 interface properties formed by low-temperature ozone re-oxidation annealing;Ceramics International;2021-12

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