High temperature characteristics of nitric oxide annealed p-channel 4H-SiC metal oxide semiconductor field effect transistors
Author:
Affiliation:
1. Department of Physics, Auburn University, Auburn, Alabama 36849, USA
Funder
Army Research Laboratory
U.S. Department of Energy
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0073523
Reference27 articles.
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5. A. S. Kashyap et al., “Silicon carbide integrated circuits for extreme environments,” in The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, October 2013 (IEEE, 2013), pp. 60–63.
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