Silicon carbide integrated circuits for extreme environments-Reference-Cited by-同舟云学术

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Silicon carbide integrated circuits for extreme environments

Published:2013-10 Issue: Volume: Page:
ISSN:
Container-title:The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications
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Author:

Kashyap Avinash S.,Chen Cheng-Po,Ghandi Reza,Patil Amita,Andarawis Emad,Yin Liang,Shaddock Dave,Sandvik Peter,Fang Kun,Shen Zhenzhen,Johnson Wayne

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6683942/6695542/06695562.pdf?arnumber=6695562

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study of damage mechanism on single crystal 4H-SiC surface layer by picosecond laser modification (PLM);Applied Surface Science;2024-11

2. State‐of‐the‐Art Electronic Materials for Thin Films in Bioelectronics;Advanced Electronic Materials;2023-07-09

3. A silicon carbide high gain differential amplifier for extreme temperature applications;Microelectronics Journal;2022-12

4. Demonstration of 4H-SiC CMOS digital IC gates based on the mainstream 6-inch wafer processing technique;Journal of Semiconductors;2022-08-01

5. Silicon carbide dry etching technique for pressure sensors design;Journal of Manufacturing Processes;2022-01

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