High-Temperature SiC CMOS Comparator and op-amp for Protection Circuits in Voltage Regulators and Switch-Mode Converters

Author:

Rahman Ashfaqur,Roy Sajib,Murphree Robert,Kotecha Ramchandra,Addington Kyle,Abbasi Affan,Mantooth Homer A.,Francis Anthony Matt,Holmes Jim,Di Jia

Funder

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

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4. Gate Oxide Instability of 4H-SiC p-Channel MOSFET Induced by AC Stress at 200 °C;IEEE Transactions on Electron Devices;2023-01

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