A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability-Reference-Cited by-同舟云学术

A New SiC Quasi MOSFET for Ultra-Low Specific On-Resistance and Improved Reliability

Published:2023-12 Issue:4 Volume:23 Page:577-583
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Kong Moufu¹^ORCID,Cheng Zeyu¹,Hu Zewei¹,Yu Ning¹,Yi Bo¹^ORCID,Yang Hongqiang¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices of China, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Natural Science Foundation of China

Key Research and Development Project of Science and Technology Plan of Sichuan Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10346019/10283943.pdf?arnumber=10283943

Reference35 articles.

1. Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses

2. Body Potential Control via p-Type Contact Resistance and Its Influence on Switching Characteristics of 4H-SiC MOSFETs

3. Voltage Stress Calculation and Measurement for Hairpin Winding of EV Traction Machines Driven by SiC MOSFET

4. Si and SiC power MOSFET characterization and comparison

5. Amplifier Based on 4H-SiC MOSFET Operation at 500 °C for Harsh Environment Applications

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