Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses-Reference-Cited by-同舟云学术

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Investigations of SiC MOSFET Short-Circuit Failure Mechanisms Using Electrical, Thermal, and Mechanical Stress Analyses

Published:2020-10 Issue:10 Volume:67 Page:4328-4334
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yao Kailun^ORCID,Yano Hiroshi^ORCID,Tadano Hiroshi,Iwamuro Noriyuki^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9204488/09165897.pdf?arnumber=9165897

Cited by 56 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Methodology for Characterizing Degradation Locations of Planar and Trench Gate SiC Power Mosfets Under Repetitive Short-Circuit Stress;IEEE Transactions on Power Electronics;2024-11

2. Short-Circuit Dynamic Model of SiC MOSFET Considering Failure Modes;IEEE Transactions on Power Electronics;2024-11

3. Impact of Layout Parameter Mismatches on Short Circuit Reliability of Parallel-Connected Planar, Trench, and Double-Trench SiC MOSFETs;IEEE Transactions on Device and Materials Reliability;2024-09

4. Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling;Solid State Phenomena;2024-08-21

5. Deep Neural Network-Based Temperature Mapping Technique for Heat Sink on Electronic Devices Using Local Thermocouple Sensors;Applied Artificial Intelligence;2024-08-12

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