Special Degradation Effects of <sup>60</sup>Co <i>γ</i>-Rays Irradiation on Electrical Parameters of SiC MOSFETs-Reference-Cited by-同舟云学术

Special Degradation Effects of ⁶⁰Co γ-Rays Irradiation on Electrical Parameters of SiC MOSFETs

Published:2023-09 Issue:9 Volume:70 Page:2165-2174
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Feng Haonan¹^ORCID,Liang Xiaowen¹^ORCID,Pu Xiaojuan¹,Yang Sheng¹^ORCID,Feng Jie¹^ORCID,Wei Ying¹,Xiang Yutang¹,Sun Jing¹,Zhang Dan¹,Li Yudong¹^ORCID,Yu Qingkui²^ORCID,Yu Xuefeng¹,Guo Qi¹^ORCID

Affiliation:

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi, China

2. China Academy of Space Technology, Beijing, China

Funder

West Light Talent Training Plan of the Chinese Academy of Sciences

National Natural Science Foundation of China

Chinese Academy of Sciences “Western Young Scholars” Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/10254311/10190763.pdf?arnumber=10190763

Reference38 articles.

1. Study of heavy ion induced single event gate rupture effect in SiC MOSFETs

2. Physics of SiC MOS interface and development of trench MOSFETs

3. Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs

4. High performance SiC trench devices with ultra-low ron

5. Fundamentals of Power Semiconductor Devices

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1. Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation;IEEE Electron Device Letters;2024-04

2. The Degradation and Recovery of 1200-V SiC MOSFET with Different Total Ionizing Doses;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27