Formation of GeSn alloy on Si(100) by low-temperature molecular beam epitaxy
Author:
Affiliation:
1. A. V. Rzhanov Institute of Semiconductor Physics, Lavrentyev Avenue 13, Novosibirsk 630090, Russia
2. Novosibirsk State University, Novosibirsk 630090, Russia
Funder
Ministry of Education and Science of the Russian Federation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4905054
Reference33 articles.
1. Electronic properties of metastableGexSn1−xalloys
2. Interband Transitions inSnxGe1−xAlloys
3. Measurement of the direct energy gap of coherently strained SnxGe1−x/Ge(001) heterostructures
4. Optical critical points of thin-filmGe1−ySnyalloys: A comparativeGe1−ySny∕Ge1−xSixstudy
5. Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy
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