Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3692735
Reference14 articles.
1. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
2. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
3. Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes
4. Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si
5. Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
Cited by 109 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Molecular Beam Epitaxy of Si, Ge, and Sn and Their Compounds;Thin Films - Growth, Characterization and Electrochemical Applications;2024-01-17
2. Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting;Journal of Physics: Condensed Matter;2022-12-14
3. Design of Mid-Infrared Ge1–x Snx Homojunction p-i-n Photodiodes on Si Substrate;IEEE Sensors Journal;2022-04-15
4. Achievable Performance of Uncooled Homojunction GeSn Mid-Infrared Photodetectors;IEEE Journal of Selected Topics in Quantum Electronics;2022-03
5. Raman scattering study of GeSn under 〈1 0 0〉 and 〈1 1 0〉 uniaxial stress;Nanotechnology;2021-06-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3