Investigation of the direct band gaps in Ge1−xSnx alloys with strain control by photoreflectance spectroscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3692735
Reference14 articles.
1. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
2. Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
3. Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes
4. Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si
5. Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
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