Electronic properties of metastableGexSn1−xalloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.36.7994/fulltext
Reference14 articles.
1. Synthesis of metastable, semiconducting Ge‐Sn alloys by pulsed UV laser crystallization
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4. A Semi-empirical tight-binding theory of the electronic structure of semiconductors†
5. Chemical trends for defect energy levels inHg(1−x)CdxTe
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