The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or (112¯2) GaN or AlN substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4767683
Reference32 articles.
1. On the origin of threading dislocations in GaN films
2. Dislocation generation in GaN heteroepitaxy
3. Relaxation of compressively-strained AlGaN by inclined threading dislocations
4. Role of inclined threading dislocations in stress relaxation in mismatched layers
5. Cracking of III-nitride layers with strain gradients
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