Role of inclined threading dislocations in stress relaxation in mismatched layers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1897486
Reference24 articles.
1. Wiley Series in Microwave and Optical Engineering;Coldren L.,1995
2. Dislocation Mechanisms of Relaxation in Strained Epitaxial Films
3. Defects in epitaxial multilayers I. Misfit dislocations
4. Stress relaxation in Si-doped GaN studied by Raman spectroscopy
5. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire
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