Relaxation of compressively-strained AlGaN by inclined threading dislocations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2056582
Reference9 articles.
1. Misfit dislocation formation in the AlGaN∕GaN heterointerface
2. Slip systems and misfit dislocations in InGaN epilayers
3. Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
4. Growth and design of deep-UV (240–290nm) light emitting diodes using AlGaN alloys
5. Optimization and performance of AlGaN-based multi-quantum-well deep-UV LEDs
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