Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1595133
Reference10 articles.
1. Realization of crack-free and high-quality thick AlxGa1−xN for UV optoelectronics using low-temperature interlayer
2. Properties of Si donors and persistent photoconductivity in AlGaN
3. Evidence for localized Si-donor state and its metastable properties in AlGaN
4. Doping of AlxGa1−xN
5. Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction
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