First formed dislocations in microcompressed c-oriented GaN micropillars and their subsequent interactions-Reference-Cited by-同舟云学术

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First formed dislocations in microcompressed c-oriented GaN micropillars and their subsequent interactions

Published:2020-07-28 Issue:4 Volume:128 Page:045107
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Magagnosc Daniel J.¹^ORCID,Derenge Michael A.²^ORCID,Jones Kenneth A.²

Affiliation:

1. Weapons and Materials Research Directorate, CCDC Army Research Laboratory, FCDD-RLW-MB, Aberdeen Proving Ground, Maryland 21005, USA

2. Sensors and Electron Devices Directorate, CCDC Army Research Laboratory, FCDD-RLS-ED, Adelphi, Maryland 20783, USA

Funder

National Research Council

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0014672

Reference36 articles.

1. Advantages of AlGaN-Based 310-nm UV Light-Emitting Diodes With Al Content Graded AlGaN Electron Blocking Layers

2. Survey of ultraviolet non-line-of-sight communications

3. High-Gain AlGaN Solar-Blind Avalanche Photodiodes

4. AlGaN Channel HEMT With Extremely High Breakdown Voltage

5. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Size-dependent fracture behavior of GaN pillars under room temperature compression;Nanoscale;2020

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