Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates-Reference-Cited by-同舟云学术

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Crystallographic Tilt in Aluminum Gallium Nitride Epilayers Grown on Miscut Aluminum Nitride Substrates

Published:2022-10-25 Issue:1 Volume:17 Page:2200323
ISSN:1862-6254
Container-title:physica status solidi (RRL) – Rapid Research Letters
language:en
Short-container-title:Physica Rapid Research Ltrs

Author:

Rathkanthiwar Shashwat¹^ORCID,Graziano Milena B.¹,Tweedie James²,Mita Seiji²,Kirste Ronny²,Collazo Ramon¹,Sitar Zlatko¹²

Affiliation:

1. Department of Materials Science and Engineering North Carolina State University Raleigh NC 27695-7919 USA

2. Adroit Materials, Inc. 2054 Kildaire Farm Road Cary NC 27518 USA

Funder

National Science Foundation

Army Research Laboratory

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssr.202200323

Reference21 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength

3. The structure of dislocations in (In,Al,Ga)N wurtzite films grown epitaxially on (0001) or (112¯2) GaN or AlN substrates

4. AlGaN devices and growth of device structures

5. Pseudomorphic growth of thick Al_0.6Ga_0.4N epilayers on AlN substrates

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