An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors
Author:
Affiliation:
1. Department of ECE, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4979649
Reference23 articles.
1. The status and perspectives of metal oxide thin-film transistors for active matrix flexible displays
2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
3. Anomalous Increase in Field-Effect Mobility in In–Ga–Zn–O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer
4. Negative bias illumination stress stability of dual-active layer amorphous indium-gallium-zinc-oxide thin-film transistor
5. Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy
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2. Effects of Heat-Treatment on the Population of Intrinsic Defects in and the Stability of an Amorphous Metal-Oxide Thin-Film Transistor;IEEE Electron Device Letters;2024-02
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