Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy-Reference-Cited by-同舟云学术

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Electrical and Photosensitive Characteristics of a-IGZO TFTs Related to Oxygen Vacancy

Published:2011-04 Issue:4 Volume:58 Page:1121-1126
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jianke Yao ,Ningsheng Xu ,Shaozhi Deng ,Jun Chen ,Juncong She ,Shieh H D,Po-Tsun Liu ,Yi-Pai Huang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5737855/05730484.pdf?arnumber=5730484

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1. Reactive ion etching of indium gallium zinc oxide (IGZO) and chamber cleaning using low global warming potential gas;Applied Surface Science;2024-10

2. LTPO-TFT Compensating Pixel Structure Reduces Thermally Generated Leakage Current in Low-Frame-Rate AMOLED Displays;IEEE Transactions on Electron Devices;2024-09

3. Enhancing the Stability and Mobility of TFTs via Indium–Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient;Nanomaterials;2024-07-26

4. Hypoeutectic Liquid Metal Printing of 2D Indium Gallium Oxide Transistors;Small;2024-07-25

5. Microscopic Structure and Dynamic Study in Amorphous InGaZnO Focusing on Oxygen-Centered Complex;The Journal of Physical Chemistry C;2024-07-18

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