Effects of Heat-Treatment on the Population of Intrinsic Defects in and the Stability of an Amorphous Metal-Oxide Thin-Film Transistor
Author:
Affiliation:
1. Department of Electronic and Computer Engineering, State Key Laboratory of Advanced Displays and Optoelectronics Technologies, The Hong Kong University of Science and Technology, Hong Kong, China
Funder
National Key Research and Development Program
Fundamental and Applied Fundamental Research Fund of Guangdong Province
Hong Kong Innovation and Technology Commission
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10415514/10368083.pdf?arnumber=10368083
Reference18 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
2. Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications
3. Novel Vertical Channel-All-Around (CAA) In-Ga-Zn-O FET for 2T0C-DRAM With High Density Beyond 4F2 by Monolithic Stacking
4. A Force and Temperature Sensor Array Based on 3-D Field-Coupled Thin-Film Transistors for Tactile Intelligence
5. Flexible Artificial Sensory Systems Based on Neuromorphic Devices
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