Affiliation:
1. Department of Electronic and Computer Engineering, State Key Laboratory on Advanced Displays and Optoelectronics and Technologies The Hong Kong University of Science and Technology Hong Kong China
2. The Hong Kong University of Science and Technology Shenzhen Research Institute Shenzhen China
Abstract
This work reported the effects of the temperature of fluorination
by fluorine plasma treatment on the performance, reliability, and
stability of an indium‐gallium‐zinc oxide thin‐film transistor.
While fluorination leads to a more positive threshold voltage,
improved reliability against electrical stress and improved
stability against non‐oxidizing heat‐treatment, that performed at
a higher temperature is found to be more effective.