Affiliation:
1. China Star Optoelectronics Technology Co., Ltd Shenzhen Guang Dong
2. Department of Electronic and Computer Engineering the Hong Kong University of Science and Technology Clear Water Bay Kowloon Hong Kong
Abstract
In this research, two typical transistors architectures(X‐bridge and Elevated‐Metal Metal‐Oxide (EMMO) TFT) and two sorts of cover layers (Al2O3 cover and Metal cover) are employed to investigate the junction resistance and its diffusion in InGaZnO‐based TFTs. While all TFTs have basically equivalent junction resistances, Metal‐covered TFTs, including both X‐bridge and EMMO structures, show larger saturated diffusion depth Δ L as well as faster diffusion speed than Al2O3‐covered TFTs.