The fraction of substitutional boron in silicon during ion implantation and thermal annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121075
Reference16 articles.
1. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
2. General model for intrinsic dopant diffusion in silicon under nonequilibrium point‐defect conditions
3. Diffusion of boron in silicon during post‐implantation annealing
4. Studies of point defect/dislocation loop interaction processes in silicon
5. Transient diffusion of ion‐implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles
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