Diffusion of boron in silicon during post‐implantation annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.348740
Reference24 articles.
1. Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon
2. Influence of implant induced vacancies and interstitials on boron diffusion in silicon
3. Formation of Shallow P+ Junctions Using Two-Step Anneals
4. Diffusion Modeling of the Redistribution of Ion Implanted Impurities
5. Radiation Damage Induced Transient Enhanced Diffusion of Dopants in Silicon
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