Funder
National Natural Science Foundation of China
Chinese Academy of Sciences
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. 5-nm gate-all-around transistor technology with 3-D stacked nanosheets;Gundu;IEEE Trans. Electron. Dev.,2022
2. Gate-all-around FETs: Nanowire and nanosheet structure;Yoon,2021
3. Vertically stacked nanosheets Tree-Type reconfigurable transistor with improved ON-current;Sun;IEEE Trans. Electron. Dev.,2022
4. “3nm GAA technology featuring Multi-Bridge-channel FET for low power and high performance applications,”;Bae,2018
5. 7-Levels-Stacked nanosheet GAA transistors for high performance computing;Barraud,2020