Author:
Angelucci R.,Gabilli E.,Lotti R.,Negrini P.,Servidori M.,Solmi S.,Anderle M.
Abstract
AbstractTransient enhanced diffusion is observed for P, As and Sb as a consequence of the recovery of the damage created by a silicon dose below the amorphization threshold. The phenomenon results more pronounced for low temperature furnace heating than after rapid thermal annealing and for those elements having a larger component of interstitialcy diffusion mechanism.A close correlation was found between the trends of the anomalous dopant diffusion and the implant damage evolution analyzed by X-ray diffraction. This evolution takes place via interstitial cluster dissolution.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. 8 Angelucci R. , Cembali F. , Negrini P. , Servidori M. and Solmi S. , to be published.
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3. Double-crystal X-ray diffraction analysis of low-temperature ion implanted silicon
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