Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell-Reference-Cited by-同舟云学术

Boron Implanted Junction with In Situ Oxide Passivation and Application to p‐PERT Bifacial Silicon Solar Cell

Published:2019-02-20 Issue:6 Volume:216 Page:1800414
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Huang Haibing¹²^ORCID,Wang Lichun¹,Mandrell Lisa³,Modanese Chiara²,Sun Shenghua¹,Wang Jianbo¹,Wang Aihua¹,Zhao Jianhua¹,Adibi Babak³,Savin Hele²

Affiliation:

1. China SunergyNo. 123. Focheng West Road, Jiangning Zone, NanjingJiangsu 211100China

2. Aalto University Department of Electronics and NanoengineeringTietotie 302150 EspooFinland

3. Intevac Inc.3560 Bassett StSanta Clara 95050CAUSA

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201800414

Reference101 articles.

1. 24·5% Efficiency silicon PERT cells on MCZ substrates and 24·7% efficiency PERL cells on FZ substrates

2. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

3. S. W.Glunz J.Benick D.Biro M.Bivour M.Hermle D.Pysch M.Rauer C.Reichel A.Richter M.Rüdiger C.Schmiga D.Suwito A.Wolf R.Preu n‐Type silicon − enabling efficiencies>20% in industrial production in35th IEEE Photovolt. Spec. Conf. 2010 pp. 050–056.

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