Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3170235
Reference22 articles.
1. Charge Trapping at Deep States in Hf–Silicate Based High-κ Gate Dielectrics
2. Interfaces and defects of high-K oxides on silicon
3. Interface characterization and current conduction in HfO2-gated MOS capacitors
4. Electrical Characterization of $\hbox{ZrO}_{2}/\hbox{Si}$ Interface Properties in MOSFETs With $\hbox{ZrO}_{2}$ Gate Dielectrics
5. Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90nm node MOSFETs
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3. Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors;Journal of Physics D: Applied Physics;2018-01-30
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