Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal–gate metal–insulator–semiconductor structures
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=1S/a=01AD02/pdf
Reference31 articles.
1. Current conduction of 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics
2. Scalability and Reliability Characteristics of CVD HfO[sub 2] Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications
3. Physical and electrical characteristics of HfN gate electrode for advanced MOS devices
4. Ultrathin HfO[sub 2](EOT<0.75 nm) Gate Stack with TaN∕HfN Electrodes Fabricated Using a High-Temperature Process
5. Change in band alignment of HfO[sub 2] films with annealing treatments
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1. The stress release of morphological change on thermochromic properties of nitrogen-incorporated VO2 thin films;Journal of Applied Physics;2023-02-06
2. Ferroelectric of HfO 2 dielectric layer sputtered with TiN or ZrN for sandwich-like metal-insulator-metal capacitors;Microelectronics Reliability;2018-04
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