Ultrathin HfO[sub 2](EOT<0.75 nm) Gate Stack with TaN∕HfN Electrodes Fabricated Using a High-Temperature Process-Reference-Cited by-同舟云学术

Ultrathin HfO[sub 2](EOT<0.75 nm) Gate Stack with TaN∕HfN Electrodes Fabricated Using a High-Temperature Process

Published:2005 Issue:11 Volume:8 Page:G311
ISSN:1099-0062
Container-title:Electrochemical and Solid-State Letters
language:en
Short-container-title:Electrochem. Solid-State Lett.

Author:

Kang J. F.,Yu H. Y.,Ren C.,Li M.-F.,Chan D. S. H.,Liu X. Y.,Kwong D.-L.

Publisher

The Electrochemical Society

Subject

Electrical and Electronic Engineering,Electrochemistry,Physical and Theoretical Chemistry,General Materials Science,General Chemical Engineering

Reference10 articles.

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4. W. Tsai, L. Ragnarsson, P.J. Chen, B. Onsia, R.J. Carter, E. Cartier, E. Young, M. Green, M. Caymax, S. De Gendt, and M. Heyns , in VLSI Technical Digest , 2003, 35.

5. S.J. Lee, S.J. Rhee, R. Clark, and D.L. Kwong , in VLSI Technical Digest , 2002, 78.

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