Scalability and Reliability Characteristics of CVD HfO[sub 2] Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications-Reference-Cited by-同舟云学术

Scalability and Reliability Characteristics of CVD HfO[sub 2] Gate Dielectrics with HfN Electrodes for Advanced CMOS Applications

Published:2007 Issue:11 Volume:154 Page:H927
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kang J. F.,Yu H. Y.,Ren C.,Sa N.,Yang H.,Li M.-F.,Chan D. S. H.,Liu X. Y.,Han R. Q.,Kwong D.-L.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. International Technology Roadmap for Semiconductors (ITRS), 2003, http//public.itrs.net

2. Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode

3. R. Choi, C. S. Kang, B. H. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan, and J. C. Lee ,Proc. Symp. VLSI Technol. Dig., p. 15 (2001).

4. W. Tsai, L. Ragnarsson, P. J. Chen, B. Onsia, R. J. Carter, E. Cartier, E. Young, M. Green, M. Caymax, S. De Gendt, and M. Heyns ,Proc. Symp. VLSI Technol. Dig., p. 35 (2003).

5. S. J. Lee, S. J. Rhee, R. Clark, and D. L. Kwong ,Proc. Symp. VLSI Technol. Dig., p. 78 (2002).

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack;IEEE Journal of the Electron Devices Society;2022

2. Physical and electrical properties of induced high-k ZrHfO crystallization with ZrN cap by high power impulse magnetron sputtering for metal–gate metal–insulator–semiconductor structures;Japanese Journal of Applied Physics;2016-11-02

3. Characteristics of metal-gate metal-insulator-semiconductor capacitor with ZrN capping layer fabricated by high-power impulse magnetron sputtering;Thin Solid Films;2016-11

4. Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories;Microelectronic Engineering;2015-04

5. The effect of ZrN antidiffusion capping layer on the electrical and physical properties of metal-gate/ZrN/Zr-graded Dy2O3/Si MIS nanolaminated structures;Microelectronic Engineering;2013-09