Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack
Author:
Affiliation:
1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Ministry of Education (MOE), Taiwan
National Chung-Shan Institute of Science and Technology
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/9714452/09815223.pdf?arnumber=9815223
Reference24 articles.
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2. First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics
3. Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge
4. Impact of nitrogen depth profiles on the electrical properties of crystalline high-K gate dielectrics
5. Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5and the Effects on Electrical Properties ofIn situNitridation
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