Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge-Reference-Cited by-同舟云学术

Effect of incorporation of nitrogen atoms in Al2O3 gate dielectric of wide-bandgap-semiconductor MOSFET on gate leakage current and negative fixed charge

Published:2018-05-11 Issue:6 Volume:11 Page:061501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kojima Eiji,Chokawa Kenta,Shirakawa Hiroki,Araidai Masaaki,Hosoi Takuji,Watanabe Heiji,Shiraishi Kenji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=6/a=061501/pdf

Reference32 articles.

1. High-voltage double-implanted power MOSFET's in 6H-SiC

2. Effects of wet oxidation/anneal on interface properties of thermally oxidized SiO/sub 2//SiC MOS system and MOSFET's

3. 1.1 kV 4H-SiC power UMOSFETs

4. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

5. A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor

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