First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1899232
Reference13 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics
3. Structural and electrical properties of HfO2 with top nitrogen incorporated layer
4. Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode
5. Observation of bulk HfO2 defects by spectroscopic ellipsometry
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