Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1510155
Reference11 articles.
1. Characteristics of TaOxNyGate Dielectric with Improved Thermal Stability
2. Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration
3. Hot-carrier effects in MOSFET's with nitrided-oxide gate-dielectrics prepared by rapid thermal processing
4. Structural and electrical properties of HfO2 with top nitrogen incorporated layer
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