Atomic layer deposition of HfNx films and improving the film performance by annealing under NH3 atmosphere
Author:
Affiliation:
1. Department of Materials Science and Engineering, and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea
2. SK Hynix Semiconductor, Inc., Icheon, Gyeonggi, 17336, Republic of Korea
Abstract
Funder
National Research Foundation of Korea
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2023/TC/D2TC03964H
Reference30 articles.
1. Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes
2. The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity
3. Ferroelectric Hf0.5Zr0.5O2 Thin Films: A Review of Recent Advances
4. Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes
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1. Impact of operation voltage and NH3 annealing on the fatigue characteristics of ferroelectric AlScN thin films grown by sputtering;Nanoscale;2023
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