Characteristics of TaOxNyGate Dielectric with Improved Thermal Stability
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films;Materials;2023-03-22
2. Improved electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric by nitrogen incorporation;Applied Physics Express;2015-05-26
3. Atomic Layer Deposition Process of Hf-Based High-k Gate Dielectric Film on Si Substrate;High-k Gate Dielectrics for CMOS Technology;2012-08-23
4. The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics;Applied Physics Letters;2008-03-24
5. Comparative Studies of Atomic Layer Deposition and Plasma-Enhanced Atomic Layer Deposition Ta2O5and the Effects on Electrical Properties ofIn situNitridation;Japanese Journal of Applied Physics;2007-05-17
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