The effect of nitrogen concentration on the band gap and band offsets of HfOxNy gate dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2903097
Reference22 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Electrical characteristics of rapid thermal nitrided-oxide gate n- and p-MOSFET's with less than 1 atom% nitrogen concentration
3. Phosphorus and arsenic penetration studies through HfSixOy and HfSixOyNz films
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