Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors-Reference-Cited by-同舟云学术

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Leakage current conduction mechanisms and electrical properties of atomic-layer-deposited HfO2/Ga2O3 MOS capacitors

Published:2018-01-30 Issue:7 Volume:51 Page:075104
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Zhang Hongpeng,Jia Renxu^ORCID,Lei Yuan,Tang Xiaoyan,Zhang Yimen,Zhang Yuming

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shaanxi New-star Plan of Science and Technology

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aaa60d/pdf

Reference31 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Deep-ultraviolet transparent conductive β-Ga2O3 thin films

3. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

4. Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/β-Ga2O3 metal-oxide-semiconductor capacitors;Journal of Applied Physics;2024-02-22

2. Surface passivation properties of atomic-layer deposited hafnium oxide on a (100) β-Ga₂O₃ MOSFET;Semiconductor Science and Technology;2024-02-07

3. Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3;Applied Physics Letters;2023-08-21

4. The ferroelectric orthorhombic phase formation of Hf_0.5Zr_0.5O₂ thin films on (−201) β-Ga₂O₃ substrate by atomic layer deposition;Japanese Journal of Applied Physics;2023-08-09

5. Band Alignment of β-Ga₂O₃ with BaTiO₃, SrTiO₃, and Related Composites;ECS Journal of Solid State Science and Technology;2023-08-01

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