Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance-Reference-Cited by-同舟云学术

Impacts of surface nitridation on crystalline ferroelectric phase of Hf1-xZrxO2 and ferroelectric FET performance

Published:2021-11-08 Issue:19 Volume:119 Page:192102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Yi-Jan¹,Teng Chih-Yu¹,Hu Chenming²³,Su Chun-Jung⁴,Tseng Yuan-Chieh¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

2. Intelligent Semiconductor Nano-system Technology Research Center, National Yang Ming Chiao Tung University, 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan

3. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA

4. Taiwan Semiconductor Research Institute, 26 Prosperity Road I, Hsinchu 30010, Taiwan

Funder

Ministry of Science and Technology, Taiwan

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0062475

Reference37 articles.

1. Piezo-Electric and Allied Phenomena in Rochelle Salt

2. Use of Negative Capacitance to Provide Voltage Amplification for Low Power Nanoscale Devices

3. Ferroelectric Field Effect Transistors for Memory Applications

4. Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$

5. Self-Aligned-Gate Metal/Ferroelectric/Insulator/Semiconductor Field-Effect Transistors with Long Memory Retention

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