Innovative Recovery Strategy for MFIS-FeFETs at Optimal Timing With Robust Endurance: Fast-Unipolar Pulsing (100 ns), Nearly Zero Memory Window Loss (0.02%), and Self-Tracking Circuit Design
Author:
Affiliation:
1. GIEE, National Taiwan University, Taipei, Taiwan
2. IIS, The University of Tokyo, Tokyo, Japan
3. EP, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
Funder
National Science and Technology Council (NSTC) in Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10508280/10479218.pdf?arnumber=10479218
Reference34 articles.
1. A 28 nm HKMG super low power embedded NVM technology based on ferroelectric FETs;Trentzsch
2. A FeFET based super-low-power ultra-fast embedded NVM technology for 22 nm FDSOI and beyond;Dunkel
3. Ferroelectric FET analog synapse for acceleration of deep neural network training
4. A Study of Endurance Issues in HfO2-Based Ferroelectric Field Effect Transistors: Charge Trapping and Trap Generation
5. Origin of the endurance degradation in the novel HfO2-based 1T ferroelectric non-volatile memories
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