Ferroelectric Enhancement in a TiN/Hf1–xZrxO2/W Device with Controlled Oxidation of the Bottom Electrode-Reference-Cited by-同舟云学术

Ferroelectric Enhancement in a TiN/Hf_1–xZr_xO₂/W Device with Controlled Oxidation of the Bottom Electrode

Published:2024-02-13 Issue:2 Volume:6 Page:1078-1086
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Chiniwar Santosh P.¹^ORCID,Hsieh Ya-Chen¹,Shih Ching-Hsiang¹,Teng Chih-Yu¹,Yang Jheng-Lin¹,Hu Chenming²³,Lin Bi-Hsuan⁴^ORCID,Tang Mau-Tsu⁴,Tseng Yuan-Chieh¹²^ORCID

Affiliation:

1. Department of Material Science & Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

3. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, United States

4. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan

Funder

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.3c01502

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